Advanced High Speed Devices

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Advanced High Speed Devices

Advanced High Speed Devices
Author: Michael S. Shur
Publisher: World Scientific
ISBN: 9814287873
Size: 65.21 MB
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Simulation and experimental results on GaN based ultra-short planar negative differential conductivity diodes for THz power generation / B. Aslan, L. F. Eastman and Q. Diduck -- 5-terminal THz GaN based transistor with field- and space-charge control electrodes / G. Simin, M. S. Shur and R. Gaska -- Performance comparison of scaled III-V and Si ballistic nanowire MOSFETs / L. Wang ... [et al.] -- A room temperature ballistic deflection transistor for high performance applications / Q. Diduck, H. Irie and M. Margala -- Emission and intensity modulation of terahertz electromagnetic radiation utilizing 2-dimensional plasmons in dual-grating-gate HEMT's / T. Otsuji ... [et al.] -- Millimeter wave to terahertz in CMOS / K. K. O, S. Sankaran ... [et al.] -- The effects of increasing AlN mole fraction on the performance of AlGaN active regions containing nanometer scale compositionally inhomogeneities / A. V. Sampath ... [et al.] -- Surface acoustic wave propagation in GaN-On-sapphire under pulsed sub-band ultraviolet illumination / V. S. Chivukula ... [et al.] -- Solar-blind single-photon 4H-SiC avalanche photodiodes / A. Vert ... [et al.] -- Monte Carlo simulations of In[symbol]Ga[symbol]As MOSFETs at 0.5 V supply voltage for high-performance CMOS / J. S. Ayubi-Moak, K. Kalna and A. Asenov -- The first 70nm 6-inch GaAs PHEMT MMIC process / H. Karimy ... [et al.] -- High-performance 50-nm metamorphic high electron-mobility transistors with high breakdown voltages / D. Xu ... [et al.] -- MBE growth and characterization of Mg-doped III-nitrides on sapphire / X. Chen ... [et al.] -- Performance of MOSFETs on reactive-ion-etched GaN surfaces / K. Tang, W. Huang, T. P. Chow -- High current density/high voltage AlGaN/GaN HFETs on sapphire / J. Shi, M. Pophristic and L. F. Eastman -- InAlN/GaN MOS-HEMT with thermally grown oxide / M. Alomari ... [et al.] -- GaN transistors for power switching and millimeter-wave applications / T. Ueda ... [et al.] -- 4-nm AlN barrier all binary HFET with SiNx gate dielectric / T. Zimmermann ... [et al.] -- Effect of gate oxide processes on 4H-SiC MOSFETs on (000-1) oriented substrate / H. Naik, K. Tang and T. P. Chow -- Characterization and modeling of integrated diode in 1.2kV 4H-SiC vertical power MOSFET / H. Naik, Y. Wang and T. P. Chow -- Packaging and wide-pulse switching of 4 mm x 4 mm silicon carbide GTOs / H. O'Brien and M. G. Koebke -- Bi-directional scalable solid-state circuit breakers for hybrid-electric vehicles / D. P. Urciuoli and V. Veliadis
Advanced High Speed Devices
Language: en
Pages: 204
Authors: Michael S. Shur, Paul Maki
Categories: Science
Type: BOOK - Published: 2010 - Publisher: World Scientific
Simulation and experimental results on GaN based ultra-short planar negative differential conductivity diodes for THz power generation / B. Aslan, L. F. Eastman and Q. Diduck -- 5-terminal THz GaN based transistor with field- and space-charge control electrodes / G. Simin, M. S. Shur and R. Gaska -- Performance comparison
Compound and Josephson High-Speed Devices
Language: en
Pages: 306
Authors: Takahiko Misugi, Akihiro Shibatomi
Categories: Science
Type: BOOK - Published: 1993-07-31 - Publisher: Springer Science & Business Media
This book reviews both the fundamentals and recent advances in analog and digital integrated circuits in compound semiconductors and Josephson junctions. Researchers, engineers, and graduate students who are unfamiliar with the field will find here a complete, unified account of the physical principles, concepts, and design techniques of these devices.
Advanced Semiconductor Devices
Language: en
Pages: 192
Authors: Takahiko Misugi, Akihiro Shibatomi
Categories: Technology & Engineering
Type: BOOK - Published: 2007 - Publisher: World Scientific
Annotation. The Proceedings cover five emerging areas of advanced device technology: wide band gap devices, terahertz and millimeter waves, nanometer silicon and silicongermanium devices, nanoelectronics and ballistic devices, and characterization of advanced photonic and electronic devices. The papers by leading researchers in high speed and advanced electronic and photonic technology
High Performance Materials and Devices for High-Speed Electronic Systems
Language: en
Pages: 152
Authors: Broadbridge C, Jain Faquir C, Tang Hong
Categories: Technology & Engineering
Type: BOOK - Published: 2018-08-07 - Publisher: World Scientific
In this review volume, the editors have included the state-of-the-art research and development in nano composites, and optical electronics written by experts in the field. In addition, it also covers applications for emerging technologies in High-Speed Electronics. In summary, topics covered in this volume includes various aspects of high performance
Advanced High Voltage Power Device Concepts
Language: en
Pages: 568
Authors: B. Jayant Baliga
Categories: Technology & Engineering
Type: BOOK - Published: 2011-09-21 - Publisher: Springer Science & Business Media
The devices described in “Advanced MOS-Gated Thyristor Concepts” are utilized in microelectronics production equipment, in power transmission equipment, and for very high power motor control in electric trains, steel-mills, etc. Advanced concepts that enable improving the performance of power thyristors are discussed here, along with devices with blocking voltage capabilities
High-Speed Devices and Circuits with THz Applications
Language: en
Pages: 261
Authors: Jung Han Choi
Categories: Science
Type: BOOK - Published: 2014-07-22 - Publisher: CRC Press
Presenting the cutting-edge results of new device developments and circuit implementations, High-Speed Devices and Circuits with THz Applications covers the recent advancements of nano devices for terahertz (THz) applications and the latest high-speed data rate connectivity technologies from system design to integrated circuit (IC) design, providing relevant standard activities and
High-speed Circuits for Lightwave Communications
Language: en
Pages: 358
Authors: Keh-Chung Wang
Categories: Technology & Engineering
Type: BOOK - Published: 1999 - Publisher: World Scientific
High speed circuits are crucial for increasing the bandwidth of transmission and switching of voice/video/data over optical fiber networks. The ever-increasing demand for bit rates higher than those available due to the explosion of Internet traffic has driven engineers to develop integrated circuits of performance approaching 100 Gb/s. Commercial lightwave
Proceedings of the Technical Conference
Language: en
Pages:
Authors: Keh-Chung Wang
Categories: Electronic packaging
Type: BOOK - Published: 1991 - Publisher:
Books about Proceedings of the Technical Conference
GaAs High-Speed Devices
Language: en
Pages: 612
Authors: C. Y. Chang, Francis Kai
Categories: Technology & Engineering
Type: BOOK - Published: 1994-09-30 - Publisher: John Wiley & Sons
The performance of high-speed semiconductor devices—the genius driving digital computers, advanced electronic systems for digital signal processing, telecommunication systems, and optoelectronics—is inextricably linked to the unique physical and electrical properties of gallium arsenide. Once viewed as a novel alternative to silicon, gallium arsenide has swiftly moved into the forefront of
Terahertz Sensing Technology
Language: en
Pages: 428
Authors: William R. Loerop, Dwight L. Woolard, Michael Shur
Categories: Technology & Engineering
Type: BOOK - Published: 2003 - Publisher: World Scientific
The last research frontier in high frequency electronics lies in the so-called terahertz (or submillimeter wave) regime, between the traditional microwave and the infrared domains. Significant scientific and technical challenges within the terahertz (THz) frequency regime have recently motivated an array of new research activities. During the last few years,